Fermi energy
英
美 [ˈfɜrmi ˈenərdʒi]
网络 费米能级; 费米能; 费米能量; 能态於费米能量; 费密能
双语例句
- Numerical Calculation of the Fermi Energy in Single-Doped and Co-doped Semiconductors GRADIENT STRUCTURE OF TLCP/ GF/ PSF IN-SITU HYBRID COMPOSITES
单掺杂及混合掺杂半导体费米能级随温度变化的数值计算聚砜基体原位混杂复合材料的梯度结构 - The electrons that participate in the conduction process are termed free electrons, which have energies greater than the Fermi energy.
参与导电过程的电子，我们称之为自由电子，其能量高于费米能级。 - Formulae of Fermi Energy in Poly-doped Semiconductor and Algorithm Computation Effect of number of stages of mixed refrigerant cycle on refrigeration performance
混合杂质半导体费米能级公式及数值计算混合制冷剂循环的级数对制冷性能的影响 - Something added that lowers value or purity. Numerical Calculation of the Fermi Energy in Single-Doped and Co-doped Semiconductors
掺杂物，杂质能使原物降低成色、纯度的添加物单掺杂及混合掺杂半导体费米能级随温度变化的数值计算 - According to the condition of electroneutrality, a general formula of Fermi energy in one-doped semiconductor is deduced.
利用电中性条件，导出了掺单一杂质半导体费米能级的普适公式，在具体应用时可作相应简。 - A model of three-dimensional asymmetric square potential well is given, and some properties of the two-dimensional electron gas in semiconductor quantum well are studied the quantum energy level and Fermi energy are obtained, and discussed.
利用提出的三维不对称方势阱模型，对半导体量子阱中二维电子气的性质进行了研究，确定其量子能级和费米能量，并对有关结果进行了讨论。 - Coulomb interaction V causes the inhomogeneous distribution of charge density, Fermi energy shift to high energy position and new Localized states appears.
另外，计入U、V使得电荷密度发生了重新分布，而且在缺陷及其周围格点上出现了束缚电荷；费米能级向能量升高的方向移动，并且在新的费米能级点出现了电子局域态。 - A Method for Calculating Fermi Energy and Carrier Concentrations in Semiconductors with Matlab
Matlab在计算半导体费米能级和载流子浓度中的应用 - These results may be explained by the hopping conductivity in the variable range in the vicinity of Fermi energy.
这些结果可以用Fermi能级附近的定域态内的变程跳跃电导来解释。 - Temperature characteristics of the Fermi energy level and the minority-carrier concentration in the heavily doping silicon
重掺杂硅费米能级和少数载流子浓度的温度特性分析 - Furthermore, we find the effect of f energy levels displacement relative to Fermi energy level and s-f hybridization increase due to applying pressure are of benefit to S-wave superconductors, but not of benefit to P-wave superconductor.
同时也发现由于加压使得系统的f能级与费密能级的相对移动和f电子与导带电子杂化的增加对S波超导有利，而对P波超导不利。 - A criterion for superconductivity is given and a new method of measuring the Fermi energy level is proposed for semiconductors exhibiting superconductivity.
2）推导出了一个超导判据，说明重掺杂（n型）是半导体获得超导性的必要条件；3）提出了一种测量超导性半导体中费密能级与杂质能级相对位置的新方法。 - It is found that the conductance oscillates periodically near the Fermi energy in the CNT with a finite-length open dangling end.
结果表明：有限长悬挂端开口碳纳米管的电导在费米能级附近作周期性振荡。 - The conducting process of a-C: H: N films was discussed accord-ing to the dependence of electrical conductivity on temperature in the range 77~ 300K. The densities of the states at the Fermi energy level were estimated.
在77～300K温度范围内，测量了a－c：H：N薄膜电导率与温度的依赖关系，讨论了其导电过程，估算了费米能级的态密度。 - Results indicate that the absolute value of Fermi energy decreases for three kinds of CNTs doped with fluorine in the the form of replacement, which is beneficial for field emission.
计算发现，掺氟后三种碳纳米管的费米能的绝对值都降低了，费米能级上的态密度却增大了，说明氟掺杂后的碳纳米管比纯碳纳米管更有利于场发射。 - Finally, according to the concept of quasi-heterojunction the Fermi energy level pinning on the surface is discussed.
从准异质结的概念出发，讨论了表面费米能级钉扎现象。 - Pinning Theory of Fermi Energy and Surface State Measurement of ZnSnO_ ( 3) Gas Sensitive Material
Fermi能级钉扎理论及ZnSnO3气敏材料表面态测定 - The impurity levels among the Fermi energy mainly caused by Ce atom.
Ce原子掺入后所产生的杂质能级对费米能级附近的能级结构产生了较大影响； - According to energy band model of semiconductor and mixed potential model of corrosion electrochemistry, the corrosion current of pyrite increases with the increase of pyrite Fermi energy ( E F) and exchange current density, that is, the rate of dissolution increases.
根据半导体电化学能带模型和腐蚀电化学混合电位模型，晶格畸变导致晶体费米能级EF升高和交换电流密度增大，从而使黄铁矿腐蚀电流增大，腐蚀速率提高。 - Electron momentum distribution and Fermi energy can be calculated.
从本征分布和抛物线函致可以算出电子的动量分布信息和估测费米能。 - In this paper, the distribution functions of three kinds of charge defect centers are given by using statistical mechanics method according to model of charge defect centers in amorphous semiconductors. The relation between Fermi energy and average electron number at charge defect centers is also given.
本文根据非晶半导体中的荷电悬挂键模型，用统计力学的方法推导出三种荷电缺陷中心的分布函数，并由此得到系统的费米能级和荷电中心上平均电子数的关系式。 - The interaction has resulted in the energy level shifts and the new structure below fermi energy Ef.
这3种相互作用导致体系能级移动，并出现新的能级结构； - This phenomenon is probably due to the change of Fermi energy by the applied magnetic field, which reduces the number of the effective charges.
这可能是由于样品在加一定磁场时3d带的费米能级发生了变化，使得有效电子数的减少所致。 - The relationship between the electronic structures and catalytic performance was explained qualitatively by OA method and first principle method according to its electronic structures. Because the d-orbital vacancies increases and static density is high around Fermi energy band, Pt has good catalytic performance.
在此基础上用OA理论和第一原理方法研究了Pt的电子结构与催化性能的关系，由于d带空穴增多和费米能级附近态密度较高，导致金属Pt的催化性能很好。 - The study on amorphous and crystalline Fe-Si-B alloys indicates that momentum distributions are almost the same, while there is a small difference on Fermi energy.
对FeSiB非晶和晶态合金的研究表明：两者的动量分布差异甚小，但费米能略有不同。 - On the relation between Fermi energy of low-dimensional electron gas and temperature
低维电子气的费密能量与温度的关系 - This indicates that there are states at the Fermi energy in superconducting state of YBCO.
这说明，在YBCO的超导态，Fermi能级处是有状态的。 - If the length is beyond this scope, the molecular conductance at Fermi energy is zero. 2.
当分子长度超过此值时，费米面处的电导为零。 - Due to the Dresselhaus spin-orbit coupling effect, the tunneling magnetoresistance inversion occurs when the energy of a localized state in the barrier matches the Fermi energy of the ferromagnetic electrodes. 4.
而且发现考虑Dresselhaus自旋轨道耦合，当势垒中局域态的能量和铁磁电极中费米能相匹配时，系统中会发生TMR的倒置现象。